analog switch applications high input impedance. low gate threshold voltage: v th = 0.5~1.5 v excellent switching times: t on = 0.06 s (typ.) t off = 0.12 s (typ.) low drain-source on resistance: r ds (on) = 1.2 ? (typ.) small package. enhancement-mode marking equivalent circuit maximum ratings (ta 25c) characteristics symbol rating unit drain-source voltage v ds 30 v gate-source voltage v gss 20 v dc drain current i d 200 ma drain power dissipation p d 200 mw channel temperature t ch 150 c storage temperature range t stg 55~150 c note: this transistor is electrostatic sensitive device. please handle with caution. weight: 0.012 g (typ.) 2SK2009 product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics (ta 25c) characteristics symbol test condition min typ. max unit gate leakage current i gss v gs 10 v, v ds 0 0.1 a drain-source breakdown voltage v (br) dss i d 1 ma, v gs 0 30 v drain cut-off current i dss v ds 30 v, v gs 0 10 a gate threshold voltage v th v ds 3 v, i d 0.1 ma 0.5 1.5 v forward transfer admittance y fs v ds 3 v, i d 50 ma 100 ms drain-source on resistance r ds (on) i d 50 ma, v gs 2.5 v 1.2 2 input capacitance c iss v ds 3 v, v gs 0, f 1 mhz 70 pf reverse transfer capacitance c rss v ds 3 v, v gs 0, f 1 mhz 23 pf output capacitance c oss v ds 3 v, v gs 0, f 1 mhz 58 pf turn-on time t on v dd 3 v, i d 10 ma, v gs 0~2.5 v 0.06 switching time turn-off time t off v dd 3 v, i d 10 ma, v gs 0~2.5 v 0.12 s switching time test circuit 2SK2009 product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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